School of Electronic Engineering
Bangor University

Institute of Bioelectronic and Molecular Microsystems

EVG Mask Aligner
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Major features

  • Top side lithography system.
  • Separation distance of 0 – 300 microns
  • Alignment accuracy of +/- 0.5 microns.
  • Light source uniformity +/- 2% over a 4” substrate.
 
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